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10379 |
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| An infrared transmitter diode and a matching receiver photo-transistor in side looking packages, ideal for mounting at the edge of a PCB or where beam break detection or data coupling is required. Maximum forward current for the diode is 100mA continuous, 1A peak (300pps, 1uS pulse). Luminous intensity is 1· 8mW at IF=50mA, with a 30° viewing angle. Phototransistor VCEO is 30 Volts, with a max dissipation of 100mW. Light IC = 20mA max and dark current is 100nA max, viewing angle 70°, rise/fall times=5uS @ RL=1K. |
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